data sheet 1 05.99 sipmos ? power transistor ? p channel ? enhancement mode ? avalanche rated pin 1 pin 2 pin 3 g d s type v ds i d r ds(on ) package ordering code buz 173 -200 v -3.6 a 1.5 w to-220 ab c67078-s1452-a2 maximum ratings parameter symbol values unit continuous drain current t c = 30 ?c i d -3.6 a pulsed drain current t c = 25 ?c i dpuls -14 avalanche energy, single pulse i d = -3.6 a, v dd = -25 v, r gs = 25 w l = 23 mh, t j = 25 ?c e as 200 mj gate source voltage v gs 20 v power dissipation t c = 25 ?c p tot 40 w operating temperature t j -55 ... + 150 ?c storage temperature t stg -55 ... + 150 thermal resistance, chip case r thjc 3.1 k/w thermal resistance, chip to ambient r thja 75 din humidity category, din 40 040 e iec climatic category, din iec 68-1 55 / 150 / 56 buz 173
buz 173 data sheet 2 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics drain- source breakdown voltage v gs = 0 v, i d = -0.25 ma, t j = 25 ?c v (br)dss -200 - - v gate threshold voltage v gs = v ds, i d = 1 ma v gs(th) -2.1 -3 -4 zero gate voltage drain current v ds = -200 v, v gs = 0 v, t j = 25 ?c v ds = -200 v, v gs = 0 v, t j = 125 ?c i dss - - -10 -0.1 -100 -1 a gate-source leakage current v gs = -20 v, v ds = 0 v i gss - -10 -100 na drain-source on-resistance v gs = -10 v, i d = -2.3 a r ds(on) - 1.2 1.5 w
buz 173 data sheet 3 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics transconductance v ds 3 2 * i d * r ds(on)max, i d = -2.3 a g fs 1.1 2.2 - s input capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c iss - 750 1150 pf output capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c oss - 125 190 reverse transfer capacitance v gs = 0 v, v ds = -25 v, f = 1 mhz c rss - 40 60 turn-on delay time v dd = -30 v, v gs = -10 v, i d = -2.6 a r gs = 50 w t d(on) - 20 30 ns rise time v dd = -30 v, v gs = -10 v, i d = -2.6 a r gs = 50 w t r - 60 95 turn-off delay time v dd = -30 v, v gs = -10 v, i d = -2.6 a r gs = 50 w t d(off) - 70 90 fall time v dd = -30 v, v gs = -10 v, i d = -2.6 a r gs = 50 w t f - 55 75
buz 173 data sheet 4 05.99 electrical characteristics, at t j = 25?c, unless otherwise specified parameter symbol values unit min. typ. max. reverse diode inverse diode continuous forward current t c = 25 ?c i s - - -3.6 a inverse diode direct current,pulsed t c = 25 ?c i sm - - -14 inverse diode forward voltage v gs = 0 v, i f = -7.2 a v sd - -1 -1.3 v reverse recovery time v r = -30 v, i f = l s, d i f /d t = 100 a/s t rr - 200 - ns reverse recovery charge v r = -30 v, i f = l s, d i f /d t = 100 a/s q rr - 0.75 - c
buz 173 data sheet 5 05.99 power dissipation p tot = | ( t c ) 0 20 40 60 80 100 120 ?c 160 t c 0 5 10 15 20 25 30 35 w 45 p tot drain current i d = | ( t c ) parameter: v gs 3 -10 v 0 20 40 60 80 100 120 ?c 160 t c 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 a -3.8 i d safe operating area i d = | ( v ds ) parameter: d = 0.01 , t c = 25?c -1 -10 0 -10 1 -10 2 -10 a i d -10 0 -10 1 -10 2 v v ds r ds(on) = v ds / i d dc 10 ms 1 ms 100 s 10 s t p = 5.6s transient thermal impedance z th jc = | ( t p ) parameter: d = t p / t -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s t p single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
buz 173 data sheet 6 05.99 typ. output characteristics i d = |( v ds ) parameter: t p = 80 s 0 -4 -8 -12 -16 v -24 v ds 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 a -8.0 i d v gs [v] a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 l p tot = 40w l -20.0 typ. drain-source on-resistance r ds (on) = |( i d ) parameter: v gs 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 a -8.0 i d 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 w 5.0 r ds (on) v gs [v] = a a -4.0 b b -4.5 c c -5.0 d d -5.5 e e -6.0 f f -6.5 g g -7.0 h h -7.5 i i -8.0 j j -9.0 k k -10.0 l l -20.0 typ. transfer characteristics i d = f ( v gs ) parameter: t p = 80 s v ds 3 2 x i d x r ds(on)max 0 -1 -2 -3 -4 -5 -6 -7 -8 v -10 v gs 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 a -8.0 i d typ. forward transconductance g fs = f ( i d ) parameter: t p = 80 s, v ds 3 2 x i d x r ds(on)max 0.0 -1.0 -2.0 -3.0 -4.0 -5.0 -6.0 a -8.0 i d 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 s 4.0 g fs
buz 173 data sheet 7 05.99 drain-source on-resistance r ds (on) = | ( t j ) parameter: i d = -2.3 a, v gs = -10 v -60 -20 20 60 100 ?c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 w 5.5 r ds (on) typ 98% gate threshold voltage v gs (th) = | ( t j ) parameter: v gs = v ds , i d = 1 ma 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -3.2 -3.6 -4.0 v -4.6 v gs(th) -60 -20 20 60 100 ?c 160 t j 2% typ 98% typ. capacitances c = f ( v ds ) parameter: v gs = 0v, f = 1mhz 0 -5 -10 -15 -20 -25 -30 v -40 v ds -2 10 -1 10 0 10 1 10 nf c c rss c iss c oss forward characteristics of reverse diode i f = | ( v sd ) parameter: t j , t p = 80 s -1 -10 0 -10 1 -10 2 -10 a i f 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 v -3.0 v sd t j = 25 ?c typ t j = 25 ?c (98%) t j = 150 ?c typ t j = 150 ?c (98%)
buz 173 data sheet 8 05.99 avalanche energy e as = | ( t j ) parameter: i d = -3.6 a, v dd = -25 v r gs = 25 w , l = 23 mh 20 40 60 80 100 120 ?c 160 t j 0 20 40 60 80 100 120 140 160 180 mj 220 e as drain-source breakdown voltage v (br)dss = | ( t j ) -60 -20 20 60 100 ?c 160 t j -180 -185 -190 -195 -200 -205 -210 -215 -220 -225 -230 v -240 v (br)dss
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